VBsemi Elec · FETs & Power MOSFETs · MPN PHKD3NQ10T,518-VB
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| Output Capacitance(Coss) | 90pF |
|---|---|
| Pd - Power Dissipation | 5W |
| Configuration | - |
| Gate Charge(Qg) | 9nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 63mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 600pF |
5W 100V 2V 63mΩ@10V 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS