VBsemi Elec · FETs & Power MOSFETs · MPN PHK5NQ15T518-VB
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| Output Capacitance(Coss) | 160pF |
|---|---|
| Pd - Power Dissipation | 5.9W |
| Gate Charge(Qg) | 23nC |
| Configuration | - |
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| RDS(on) | 80mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.735nF |
5.9W 150V 1.2V 80mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS