VBsemi Elec PHK12NQ03LT-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PHK12NQ03LT-VB

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)165pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)73pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

N-Channel 30V 13A 2.2W Surface Mount SO-8

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