VBsemi Elec · FETs & Power MOSFETs · MPN PHK12NQ03LT,518-VB
No reviews yet — be the first to review VBsemi Elec PHK12NQ03LT,518-VB.
| Output Capacitance(Coss) | 165pF |
|---|---|
| Pd - Power Dissipation | 4.1W |
| Gate Charge(Qg) | 6.1nC |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| RDS(on) | 8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 800pF |
4.1W 30V 1V 8mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS