VBsemi Elec · FETs & Power MOSFETs · MPN PHK04P02T,518-VB
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| Output Capacitance(Coss) | - |
|---|---|
| Pd - Power Dissipation | 19W |
| Drain to Source Voltage | 20V |
| Configuration | - |
| Gate Charge(Qg) | 20nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 15mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
19W 20V 1.2V 15mΩ@4.5V 1 P-Channel P-Channel SO-8 Single FETs, MOSFETs RoHS