VBsemi Elec · FETs & Power MOSFETs · MPN PHD9NQ20T,118-VB
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| Output Capacitance(Coss) | 180pF |
|---|---|
| Pd - Power Dissipation | 96W |
| Configuration | - |
| Gate Charge(Qg) | 34nC |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 245mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
96W 200V 2V 245mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS