VBsemi Elec PHB55N03LT-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PHB55N03LT-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)255pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation120W
RDS(on)12mΩ@10V;18mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)170pF
Input Capacitance(Ciss)1.201nF
TypeN-Channel

Technical details

N-Channel 30V 50A 120W Surface Mount TO-263(D2PAK)

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