VBsemi Elec · FETs & Power MOSFETs · MPN PHB32N06LT,118-VB
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| Output Capacitance(Coss) | 1nF |
|---|---|
| Pd - Power Dissipation | 150W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 60nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 32mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
150W 60V 3V 32mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS