VBsemi Elec · FETs & Power MOSFETs · MPN PHB18NQ10T-VB
No reviews yet — be the first to review VBsemi Elec PHB18NQ10T-VB.
| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 280pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 105W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 100mΩ@10V |
| Input Capacitance(Ciss) | 950pF |
| Type | N-Channel |
N-Channel 100V 20A 105W Surface Mount TO-263(D2PAK)