VBsemi Elec PA610ATF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PA610ATF-VB

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Specifications

Configuration-
Gate Charge(Qg)72nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)560pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)86mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.7nF

Technical details

N-Channel 100V 18A 48W Through Hole TO-220F

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