VBsemi Elec PA110BDA-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PA110BDA-VB

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)114mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)950pF
TypeN-Channel

Technical details

N-Channel 100V 15A 96W Surface Mount TO-252

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