VBsemi Elec P2804ND5G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN P2804ND5G-VB

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Specifications

Gate Charge(Qg)310nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation108W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)14mΩ@10V
Input Capacitance(Ciss)2.248nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 40V 50A 108W Surface Mount TO-252-4L

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