VBsemi Elec P2003ETG-VB

VBsemi Elec · FETs & Power MOSFETs · MPN P2003ETG-VB

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Specifications

Gate Charge(Qg)57nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)455pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)8mΩ@10V
Input Capacitance(Ciss)3.95nF
TypeP-Channel

Technical details

P-Channel 30V 70A 50W Through Hole TO-220AB

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