VBsemi Elec P140N10ZA-VB

VBsemi Elec · FETs & Power MOSFETs · MPN P140N10ZA-VB

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)36mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.5nF
TypeN-Channel

Technical details

N-Channel 100V 55A 3.75W Through Hole TO-220AB

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