VBsemi Elec · FETs & Power MOSFETs · MPN NXV100XPR-VB
No reviews yet — be the first to review VBsemi Elec NXV100XPR-VB.
| Output Capacitance(Coss) | 150pF |
|---|---|
| Pd - Power Dissipation | 2.5W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 11.4nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 46mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.295nF |
2.5W 30V 500mV 46mΩ@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS