VBsemi Elec NVMFS6H800NT1G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NVMFS6H800NT1G-VB

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Specifications

Gate Charge(Qg)92nC@10V
Drain to Source Voltage85V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation136W
RDS(on)4mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)225pF
Number1 N-channel
Input Capacitance(Ciss)8.6nF
TypeN-Channel

Technical details

N-Channel 85V 140A 136W Surface Mount DFN5x6-8

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