VBsemi Elec · FETs & Power MOSFETs · MPN NTZD5110NT1G-VB
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 1.3nC@8V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 14pF |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 220mW |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 1.2Ω@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 40pF |
N-Channel Array 60V 300mA 220mW Surface Mount SC75-6