VBsemi Elec · FETs & Power MOSFETs · MPN NTTFS5116PLTWG-VB
No reviews yet — be the first to review VBsemi Elec NTTFS5116PLTWG-VB.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 36nC |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 38.5W |
| RDS(on) | 75mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.6nF |
| Type | P-Channel |
P-Channel 60V 11A 38.5W Surface Mount DFN3x3-8