VBsemi Elec · FETs & Power MOSFETs · MPN NTTFS4H07NTAG-VB
No reviews yet — be the first to review VBsemi Elec NTTFS4H07NTAG-VB.
| Output Capacitance(Coss) | 1.725nF |
|---|---|
| Pd - Power Dissipation | 250W |
| Drain to Source Voltage | 20V |
| Configuration | - |
| Gate Charge(Qg) | 171nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| RDS(on) | 2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
250W 20V 1V 2mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS