VBsemi Elec · FETs & Power MOSFETs · MPN NTTFS1D8N02P1E-VB
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| Gate Charge(Qg) | 123nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 1.725nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 2.5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
| Type | N-Channel |
N-Channel 20V 100A 250W Surface Mount DFN3x3-8