VBsemi Elec NTPF600N80S3Z-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NTPF600N80S3Z-VB

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Specifications

Gate Charge(Qg)81nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation301W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)540mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.6nF
TypeN-Channel

Technical details

N-Channel 800V 9A 301W Through Hole TO-220F

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