VBsemi Elec NTMFS015N10MCLT1G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NTMFS015N10MCLT1G-VB

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)132pF
Current - Continuous Drain(Id)65A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)11.2pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.97nF
TypeN-Channel

Technical details

N-Channel 100V 65A 5W Surface Mount DFN-8(5x6)

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