VBsemi Elec NTMFS005N10MCLT1G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NTMFS005N10MCLT1G-VB

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)105A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)6mΩ@4.5V
Input Capacitance(Ciss)11nF
TypeN-Channel

Technical details

N-Channel 100V 105A Surface Mount DFN5x6-8

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