VBsemi Elec · FETs & Power MOSFETs · MPN NTMD5838NLR2G-VB
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| Gate Charge(Qg) | 5.9nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 175pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF |
| RDS(on) | 10mΩ@10V;15mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 641pF |
| Type | N-Channel |
N-Channel Array 40V 10A 2.1W Surface Mount SO-8