VBsemi Elec · FETs & Power MOSFETs · MPN NTJD5121NT1G-VB
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| Gate Charge(Qg) | 600pC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 6pF |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 2.5Ω@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 30pF |
| Type | N-Channel |
N-Channel Array 60V 300mA 0.35W Surface Mount SC-70-6