VBsemi Elec · FETs & Power MOSFETs · MPN NTJD4001NT1G-VB
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| Gate Charge(Qg) | 5nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.7W |
| RDS(on) | 180mΩ@1.8V |
| Number | 2 N-Channel |
| Type | N-Channel |
N-Channel Array 20V 2.6A 2.7W Surface Mount SOT-363