VBsemi Elec NTHL067N65S3H-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NTHL067N65S3H-VB

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Specifications

Gate Charge(Qg)273nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)251pF
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation415W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.682nF
TypeN-Channel

Technical details

N-Channel 650V 47A 415W Through Hole TO-247AC

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