VBsemi Elec NTGS3455T1G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NTGS3455T1G-VB

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Specifications

Gate Charge(Qg)10nC@10V;5.1nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)4.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)49mΩ@10V;54mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)450pF
TypeP-Channel

Technical details

P-Channel 30V 4.8A 2W Surface Mount TSOP-6

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