VBsemi Elec · FETs & Power MOSFETs · MPN NTGD1100LT1G-VB
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| Gate Charge(Qg) | 2.7nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Pd - Power Dissipation | 1.14W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 210pF |
P-Channel 20V 4A 1.14W Surface Mount TSOP-6