VBsemi Elec · FETs & Power MOSFETs · MPN NTD6416ANLT4G-VB
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 55mΩ@10V;57mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
| Type | N-Channel |
N-Channel 100V 25A 83W Surface Mount TO-252