VBsemi Elec · FETs & Power MOSFETs · MPN NTD5807NT4G-VB
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| Gate Charge(Qg) | 85nC@10V;42nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 725pF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V;2.5V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 570pF |
| RDS(on) | 12mΩ@10V;14mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.801nF |
| Type | N-Channel |
N-Channel 40V 90A 3.75W Surface Mount TO-252