VBsemi Elec · FETs & Power MOSFETs · MPN NTD5805NT4G-VB
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 550pF |
| Current - Continuous Drain(Id) | 85A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 6.5mΩ@4.5V |
| Input Capacitance(Ciss) | 2.38nF |
| Type | N-Channel |
40V 85A 2.5V 6.5mΩ@4.5V N-Channel TO-252 Single FETs, MOSFETs RoHS