VBsemi Elec · FETs & Power MOSFETs · MPN NTD4969NT4G-VB
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| Gate Charge(Qg) | 61nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 525pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 205W |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF |
| RDS(on) | 5mΩ@10V;6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.201nF |
| Type | N-Channel |
N-Channel 30V 80A 205W Surface Mount TO-252