VBsemi Elec · FETs & Power MOSFETs · MPN NTD4858NT4G-VB
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| Gate Charge(Qg) | 151nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.525nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.201nF |
| Vgs | ±20V |
N-Channel 30V 100A 3.75W Surface Mount TO-252