VBsemi Elec · FETs & Power MOSFETs · MPN NTD25P03LG-VB
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| Gate Charge(Qg) | 27nC@10V;19nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 255pF |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V;2.5V |
| Pd - Power Dissipation | 2.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 33mΩ@10V;46mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.35nF |
| Type | P-Channel |
P-Channel 30V 38A 2.7W Surface Mount TO-252