VBsemi Elec NTB85N03G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NTB85N03G-VB

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Specifications

Gate Charge(Qg)171nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.725nF
Current - Continuous Drain(Id)98A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250W
RDS(on)2.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)970pF
Input Capacitance(Ciss)12.065nF
TypeN-Channel

Technical details

N-Channel 30V 98A 250W Surface Mount TO-263(D2PAK)

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