VBsemi Elec · FETs & Power MOSFETs · MPN NTB5860NT4G-VB
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 184nC@10V |
| Output Capacitance(Coss) | 1.17nF |
| Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 810pF |
| RDS(on) | 2.8mΩ@10V |
| Input Capacitance(Ciss) | 9.125nF |
| Type | N-Channel |
N-Channel 60V 210A 375W Surface Mount TO-263(D2PAK)