VBsemi Elec NP88N04NHE-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NP88N04NHE-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)171nC@10V;81.5nC@4.5V
Current - Continuous Drain(Id)90A
Output Capacitance(Coss)1.725nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)970pF
RDS(on)3.4mΩ@10V;7mΩ@4.5V
Input Capacitance(Ciss)3.5nF
TypeN-Channel

Technical details

N-Channel 30V 90A 250W Through Hole TO-262

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