VBsemi Elec NP82N055NUG-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NP82N055NUG-VB

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Specifications

Gate Charge(Qg)145nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)885pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)420pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.495nF
TypeN-Channel

Technical details

N-Channel 60V 120A 230W Through Hole TO-262

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