VBsemi Elec · FETs & Power MOSFETs · MPN NP80N04-VB
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 96nC@10V |
| Output Capacitance(Coss) | 600pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.75W |
| RDS(on) | 5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 320pF |
| Input Capacitance(Ciss) | 3.2nF |
| Type | N-Channel |
N-Channel 40V 100A 3.75W Through Hole TO-262