VBsemi Elec NP80N04-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NP80N04-VB

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)96nC@10V
Output Capacitance(Coss)600pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.75W
RDS(on)5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)320pF
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

N-Channel 40V 100A 3.75W Through Hole TO-262

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