VBsemi Elec NP55N03SUG-E1-AY-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NP55N03SUG-E1-AY-VB

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)525pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)61pF
RDS(on)6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.201nF
TypeN-Channel

Technical details

N-Channel 30V 80A 3.75W Surface Mount TO-252

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