VBsemi Elec NP50P06KDG-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NP50P06KDG-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)240nC@10V
Output Capacitance(Coss)975pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation272W
Reverse Transfer Capacitance (Crss@Vds)760pF
RDS(on)8.5mΩ@4.5V
Input Capacitance(Ciss)9.2nF
TypeP-Channel

Technical details

P-Channel 60V 110A 272W Surface Mount TO-263(D2Pak)

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