VBsemi Elec NDP6051-VB

VBsemi Elec · FETs & Power MOSFETs · MPN NDP6051-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)47nC@10V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)570pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation136W
RDS(on)11mΩ@10V;13mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)325pF
Number1 N-channel
Input Capacitance(Ciss)4.2nF
TypeN-Channel

Technical details

N-Channel 60V 60A 136W Through Hole TO-220AB

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