VBsemi Elec · FETs & Power MOSFETs · MPN MTP12N20-VB
No reviews yet — be the first to review VBsemi Elec MTP12N20-VB.
| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 10A |
| Output Capacitance(Coss) | 80pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 121W |
| RDS(on) | 270mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| Input Capacitance(Ciss) | 110pF |
| Type | N-Channel |
N-Channel 200V 10A 121W Through Hole TO-220AB