VBsemi Elec · FETs & Power MOSFETs · MPN MTE2D4N06E3-VB
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 180nC@10V |
| Output Capacitance(Coss) | 1nF |
| Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 750pF |
| RDS(on) | 9mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.3nF |
| Type | N-Channel |
N-Channel 60V 210A 375W Through Hole TO-220AB