VBsemi Elec · FETs & Power MOSFETs · MPN MTB75N05HDT4-VB
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| Gate Charge(Qg) | 96nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 70W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7nF |
60V 120A 4V 70W 12mΩ@10V 1 N-channel TO-263-2 Single FETs, MOSFETs RoHS