VBsemi Elec · FETs & Power MOSFETs · MPN MTB1D7N03E3-VB
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| Gate Charge(Qg) | 257nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.725nF |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 175W |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF |
| RDS(on) | 2.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.4nF |
| Type | N-Channel |
N-Channel 30V 140A 175W Through Hole TO-220AB