VBsemi Elec · FETs & Power MOSFETs · MPN MT19N10-VB
No reviews yet — be the first to review VBsemi Elec MT19N10-VB.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 21nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 55mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
N-Channel 100V 12A 83W Surface Mount TO-252