VBsemi Elec · FETs & Power MOSFETs · MPN MMDF3N04HDR2G-VB
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| Gate Charge(Qg) | 11.7nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 4W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 28mΩ@10V;30mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 600pF |
| Type | N-Channel |
N-Channel Array 60V 7A 4W Surface Mount SO-8