VBsemi Elec ME6980ED-VB

VBsemi Elec · FETs & Power MOSFETs · MPN ME6980ED-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)13nC@4.5V
Current - Continuous Drain(Id)8.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.6W
RDS(on)12mΩ@10V;19mΩ@4.5V
Number2 N-Channel
TypeN-Channel

Technical details

N-Channel 30V 8.6A 1.6W Surface Mount TSSOP-8

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